收藏本站
September 1999
Si4532DY*
Dual N- and P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-Channel enhancement mode power
field effect transistors are produced using Fairchild's
propretary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for
low voltage applications such as notebook computer
power management and other battery powered circuits
where fast switching, low in-line power loss, and
resistance to transients are needed.
Features
? N-Channel 3.9A, 30V.R DS(ON) = 0.065 ? @V GS = 10V
R DS(ON) = 0.095 ? @V GS = 4.5V.
? P-Channel -3.5A,-30V.R DS(ON) = 0.085 ? @V GS = -10V
R DS(ON) = 0.190 ? @V GS = -4.5V.
? High density cell design for extremely low R DS(ON) .
? High power and current handling capability in a widely
????used surface mount package.
? Dual (N & P-Channel) MOSFET in surface mount
????package.
' 
' 
' 
' 
62  
6 
* 
6 
* 
$EVROXWH 0D[LP XP 5DWLQJV
°
7KHUP DO &KDUDFWHULVWLFV
θ
θ
3DFNDJH 0DUNLQJ DQG 2UGHULQJ ,QIRUP DWLRQ
? 1999 Fairchild Semiconductor Corporation
°
°
Si4532DY, Rev. C
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI4542DY-T1-GE3 MOSFET N/P-CH 30V 8-SOIC
SI4542DY MOSFET N/P-CH COMPL 30V 8-SOIC
SI4561DY-T1-E3 MOSFET N/P-CH 40V 8-SOIC
SI4562DY-T1-GE3 MOSFET N/P-CH 20V 8-SOIC
SI4563DY-T1-GE3 MOSFET N/P-CH 40V 8-SOIC
SI4565ADY-T1-GE3 MOSFET N/P-CH 40V 8-SOIC
SI4567DY-T1-GE3 MOSFET N/P-CH 40V 8-SOIC
SI4622DY-T1-E3 MOSFET N-CH D-S 30V 8-SOIC
相关代理商/技术参数
SI4532DY-E3 功能描述:MOSFET 30V 4.9/3.9A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4532DY-T1 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N/P-CH 30V 3.9A/3.5A 8-Pin SOIC N T/R
SI4532DY-T1-E3 功能描述:MOSFET 30 Volt 4.9/3.9A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4532DY-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI4539 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N & P-Channel Enhancement Mode Field Effect Transistor
SI4539ADY 功能描述:MOSFET 30V 5.9/4.9A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4539ADY 制造商:Vishay Siliconix 功能描述:MOSFET DUAL NP SO-8
SI4539ADY_05 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N- and P-Channel 30-V (D-S) MOSFET